Reprints     Printer-Friendly    Email this Article    RSS        Font Size     What's This?

[Product Innovation]

Dual Thermal Paths Double Power Handling For Surface-Mount MOSFETs


Two-sided cooling and direct attachment of the chip to the board slash the package's electrical and thermal resistance.

David G. Morrison  |   ED Online ID #1476  |   January 21, 2002

Article Rating: Not Rated

Improvements in silicon processes have steadily produced more-efficient power MOSFETs. These MOSFETs have propelled dc-dc converters, such as the synchronous buck converters used to power microprocessors, to higher levels of power density. But as MOSFETs have gotten better, the package's electrical characteristics—in particular, surface-mount styles—have become much more significant.

As a result, over half of the RDS(ON) of the best available MOSFETs is now attributed to the package rather than the silicon. And because existing MOSFET packages introduce significant thermal resistance as well, they also limit the power dissipation of MOSFETs, because of their inability to transfer heat efficiently away from the chip.

International Rectifier's DirectFET is a surface-mount package that improves MOSFET performance by lowering both the package's electrical and thermal resistance. It does so with a design that permits direct attachment of the die to the customer's pc board via solderable pads on the chip and through attachment to a copper drain clip that allows double-sided cooling (Fig. 1). The latter feature is an industry first for a surface-mount power package, according to Carl Blake, an IR marketing manager. He notes that DirectFET differs from previous package innovations, which produced relatively minor improvements in performance. Says Blake, "This is the first power package developed from the ground up."

DirectFET is being introduced in an SO-8-sized footprint, which naturally warrants its comparison with that industry-standard package. Because of its improved electrical and thermal design, IR's new package can carry twice the current of a standard SO-8. The DirectFET boasts a die-free package resistance that is 86% less than the SO-8. In terms of RDS(ON), one of the first DirectFET packaged devices—the IRF6603—measures just 3.8 mΩ at VGS = 10 V, a value that is 45% less than IR's best SO-8 MOSFET, the IRF7822.

At the same time, DirectFET's thermal resistance is much less, with values of 3°C/W junction-to-case on top and 1°C/W junction-to-pc board. For the SO-8, these same parameters would be 18°C/W and 20°C/W, respectively (Fig. 2). So given the same power levels, a DirectFET-packaged MOSFET operating under full load should run more than 35°C cooler than an SO-8.

Although the bottomless SO-8 developed by Fairchild also achieves a 1°C/W thermal resistance from junction to pc board, its thermal resistance from junction-to-case on top is similar to a standard SO-8. Consequently, it transfers all of its heat to the pc board, which can complicate board design. Double-sided cooling also means better thermal performance for the DirectFET when compared to other existing surface-mount packages (Fig. 3).

To achieve these performance levels, DirectFET trades plastic packaging and wire bonds for solderable die pads and a copper clip, while eliminating overmolding in favor of passivation (Fig. 1, again). Gate and source connections are made directly to the pc board (without solder balls) via wide-area pads on the die. These pads provide the good thermal interface needed to achieve the 1°C/W noted previously, while also reducing electrical resistance.

At the same time, the drain connection is made through a copper clip that simultaneously provides low electrical resistance to the board and low thermal resistance from the top side of the chip to the case. That in turn permits greater heat dissipation up top with the option for heatsinking and forced-air cooling.

Eliminating wirebonds not only lowers the RDS(ON) associated with packaging, it also permits the package to house a 30% larger die than an SO-8. Another benefit of the DirectFET construction is its low package height. It stands 0.7 mm tall, versus 1.75 mm for the SO-8.

The primary innovation in DirectFET is a proprietary passivation scheme that serves two purposes. The passivation acts as a solder mask when the device is mounted to the pc board, preventing the gate and source from shorting. It also seals the die against potential sources of contamination—humidity, solder flux, board cleaners, and others—while leaving the die pads exposed for soldering.




<-- prev. page     [1] 2     next page -->

Reprints     Printer-Friendly    Email this Article    RSS        Font Size     What's This?


  • Network-On-Chip Tools Arrive for The Masses
  • Tackling System Design Challenges Through Early Verification
  • ESL Tools Take Center Stage As Designers Move Up
  • Parasitic Extraction Tool Targets Next-Generation Custom ICs
  • Synopsys Jumps Into ESL-Synthesis Pool
  • Verify Control Systems Before Committing To Hardware
  • You're Using How Many FPGAs?
  • Tool Up For The FPGA Blitz
    1) Build A Smart Battery Charger Using A Single-Transistor Circuit
    (183 views today)
    2) Hot Hands For Some Cool Rock: Motion Sensing Meets Audio Engineering
    (168 views today)
    3) What's All This Transimpedance Amplifier Stuff, Anyhow? (Part 1)
    (73 views today)
    4) GPS-Derived Grandmaster Clock Delivers Ultra-Precise Time And Frequency Sync
    (73 views today)
    5) Bidirectional H-Bridge DC-Motor Motion Controller
    (62 views today)
    ALL TOP 20







    POST YOUR COMMENTS HERE

    Name:

    Email:
    Rate this article:

     less useful more useful 
    1
    2
    3
    4
    5
    Your Comments:

    Enter the text from the image below




    Please refresh the page if you have trouble reading this text.
    (Acceptable Use Policy)
     
     

    PartFinder

    Find real-time pricing, stock status, same-day/next-day shipping options and more. Brought to you by Digi-Key. Go to PartFinder.    
    GlobalSpec

    PART SEARCH :
    Powered by: GlobalSpec - The Engineering Search Engine
    Sponsored Links

    Electronic Design Europe Electronic Design China EEPN Power Electronics Auto Electronics Microwaves & RF
    Mobile Dev & Design Schematics Find Power Products Military Electronics EE Events Related Resources