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[Technology Report]

IC Packages Feel The Squeeze


Packing more IC functionality into smaller form factors stacks the deck against IC makers and foreshadows difficult interconnect challenges.

Roger Allan  |   ED Online ID #16982  |   October 11, 2007

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How much can one package take? As consumer electronics design features scale down to 45-nm and even 32-nm nodes, IC makers are pushed to the limits to shoehorn more functionality into these packages- and lest we not forget the even thornier interconnection issues.

The logical approach is packaging in the Z direction, or 3D IC packaging. In the meantime, IC makers try to satisfy consumer demands with advanced methods for tried-and-true wire-bonding technology while looking ahead at flip-chip and wafer-chip bonding using through-silicon vias (TSVs).

The quest for denser 3D IC packaging spreads across a spectrum of companies. Amkor, IBM, IMEC, Intel, Qimonda AG, Samsung, STATS ChipPAC, Tessera, Texas Instruments, Tezzaron, Xanoptix, Ziptronix, and ZyCube are all investigating 3D IC packages. Some are also sampling 3D ICs using TSV technology.

For instance, Amkor Technology Inc., a provider of advanced semiconductor assembly and test services, and IMEC, a nonprofit nanoelectronics and nanotechnology research center based in Belgium, entered into a two-year collaboration agreement to develop cost-effective 3D integration technology. It will be based on wafer-level processing techniques.

Market research firm Yolé Dévelopment foresees a number of 2D and 3D technologies that will coexist, depending on the required packaging density. The firm also expects TSV technology to dominate future high-density packaging. According to the company, TSV technology first will be used for packaging memories, followed by adding logic and then control devices in the form of ASICs and system-on-a-chip (SoC) ICs.

Stacking continues to be popular, with advances coming at the chip, wafer, and package levels. Two of the hottest packaging trends are the use of package-on-package (PoP) and multichip package (MCP) methods. Chips with lower yields appear to favor PoPs, but those with high density and performance levels favor MCPs. Another percolating area revolves around system- in-package (SiP) technology, where logic and memory devices are manufactured in their own respective processes and then joined together in an SiP package.

Memory technology likely will be the first to fully utilize TSVs on a production basis. Samsung Electronics Co. Ltd. has crafted an all-DRAM stacked-memory package using waferscale- package (WSP) TSVs housed in aluminum pads to avoid performance slow-downs caused by the redistribution layer.

The wafer-level-processed stacked package comprises four 512-Mbit dual-date-rate (DDR2) DRAM chips for 2 Gbits of high-density memory. The DRAMs are stacked and interconnected with TSVs to form a 4-Gbyte dual in-line memory module (DIMM).

In contrast to wire-bonding techniques, this proprietary technology forms laser-cut, micron-sized holes vertically through the silicon and connects the memory circuits directly with copper filling. A proprietary wafer-thinning technique helps eliminate warped die in the low-profile package. Meanwhile, WSP has advanced even further with Tezzaron's FaStack wafer-stacking technology. It allows for the stacking of sensor, signal-conditioning, memory, and processor chips on a thin 3D package (Fig. 1).

Even printed-circuit-board (PCB) technology has gone 3D. Panasonic Electric Works' microscopic integrated processing technology (MIPTEC) makes it possible to form 3D PCBs on an injection-molded substrate using fine-pitch laser patterning. Panasonic claims MIPTEC enables the development of any number of devices that require flexibility, miniaturization, and optical, electrical, and thermal properties.

A common challenge to all 3D packaging is creating the right interconnect technology. Ziptronix's high-yield direct-bondinterconnect (DBI) technology can be implemented in a die-towafer or a wafer-to-wafer format. It supports an interconnect pitch of less than 10 µm with typical interconnect widths of 2 µm and alignment accuracy of 1 µm.

Sematech, a chip-making consortium, believes the interconnect challenge is crucial. It has opened up membership in its 3D interconnect program to suppliers, chip makers, assembly and packaging companies, and other participants. Launched in 2005, the program has been drafted for the International Technology Roadmap for Semiconductors (ITRS). TSVs represent one of the program's focus areas.

Continued on page 2.




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