Electronic Design

  
Reprints     Printer-Friendly    Email this Article    RSS        Font Size     What's This?


[Embedded in Electronic Design]
NAND Delivers Capacity And NOR Capabilities

William Wong  |   ED Online ID #21204  |   June 11, 2009


Samsung’s Flex One NAND has moved to 40 nm. It combines multi-level cell (MLC) and single-level cell (SLC) flash with an SRAM front end providing NOR functionality, including the ability to run applications directly. The Flex One uses a 2-kbyte SRAM cache to implement SLC flash. Designers can configure the flash memory split into SLC (code and data) and MLC (data) partitions. MLC storage density is twice the 1-bit/cell total for the SLC side. Flash capacities up to 2 Gbytes are available with a dual-die package delivering 4 Gbytes. Samsung provides its own flash file system drivers.

See associated figure

SAMSUNG
www.samsung.com


Reprints   Printer-Friendly  Email this Article  RSS    Font Size   What's This?



POST YOUR COMMENTS HERE
Name:

Email:
Your Comments:

Enter the text from the image below


Please refresh the page if you have trouble reading this text.

Search Electronic Design
     
  
 
Web Seminar
Sponsored By:
Title: Read Pacing: A Performance Enhancing Feature of PCI Express Gen 2 Switch Devices
Speakers: 
Date: 07/01/08
Register: 

Electronic Design Europe Electronic Design China EEPN Power Electronics Auto Electronics Microwaves & RF
Mobile Dev & Design Schematics Find Power Products Military Electronics EE Events Related Resources