[Leapfrog: First Look]
Nonvolatile Storage Doesn't Require Transistors
William Wong
ED Online ID #21344
June 25, 2009
Copyright © 2006 Penton Media, Inc., All rights reserved. Printing of this document is for personal use only.
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The CMOx nonvolatile
memory
technology from
Unity Semiconductor targets
storage-class memory applications.
CMOx is based on
new materials in the semiconductor
process called
conductive metal oxides
that use the movement of
ionic charge carriers to store
information. With 64-Gbit
chip capacity on the horizon,
it looks to be a challenger
to NAND flash.
The technology employs
a multi-layer, multi-level cell
(MLC) approach that gives it
an inherent fourfold improvement
over MLC flash. Each
CMOx MLC cell stores 2
bits. The four-layer approach
stores 8 bits (Fig. 1). The
structure uses a passive
cross-point multi-layer
memory array that doesn’t
require a transistor
per cell.
Memory technologies
such as
phase-change memory
(PCM) and magnetoresistive
RAM (MRAM) still use
a transistor per cell. This
tends to prevent their use
in cross-point multi-layer
chip architectures. The
cross-point memory array
structure delivers very
dense chips.
The CMOx cells have a
resistance change element
that differs from resistive
RAM (RRAM) memory.
Unity Semiconductor’s
approach isn’t filamentary. Instead, it uses uniform conduction
across the device.
In addition to a fourfold
density improvement, CMOx
should also provide a write
speed improvement of five to
10 times compared to MLC
NAND flash with better endurance
characteristics as well.
The technology uses less than
1 µA of write current per cell.
Unity Semiconductor splits
the production process into
a standard front-end-of-line
(FEOL) CMOS base wafer
creation and custom backend-
of-line (BEOL) memory
layer processing (Fig. 2). The
FEOL can be fabricated at
a CMOS logic foundry with
existing production capability
and capacity on a trailingedge
CMOS (90 nm) process.
This approach reduces risk
and cost for those producing
CMOx chips.
The initial CMOx 64 Gbitdevice
is expected to run at
100 MHz with a maximum
data rate of 200 Mbytes/s. It
should have a sustained write
speed of 60 Mbytes/s and
sustained read speeds of 100
Mbyte/s. Unity Semiconductor
expects to have 64-Gbit
products available in 2010.
BILL WONG
UNITY SEMICONDUCTOR
www.unitysemi.com
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