RF Power Transistor Packs 1.5 kW

Chiseled for UHF pulsed radar applications, the Model 0405SC-1500M RF power transistor exploits state-of-the-art SiC technology to provide 1,500W of peak power in a compact single-ended package that replaces push-pull balun circuitry found in conventional silicon BJT or LDMOS designs. The device is a common gate, class AB transistor designed for UHF frequencies from 406 MHz to 450 MHz. It is built with 100% gold metallization and gold wires in a hermetically sealed package suitable for use in weather radar and over the horizon radar applications. Other features include a medium pulse format of 300 µs at 6%, a typical power gain of 8 dB, and a drain efficiency of 45% at 450 MHz. MICROSEMI CORP., Irvine, CA. (800) 713-4113.