Qualified for automotive applications, the
AUIRG7CH80K6B-M 1200V insulated gate bipolar transistor (IGBT) with solderable front metal is suitable for use with high-current, high-voltage automotive inverter modules common to electric and hybrid electric vehicles as well as medium-power drives. The IGBT employs the company’s latest-generation field stop trench technology to reduce conduction and switching losses. Additionally, its solderable front metal allows dual-sided cooling to improve thermal performance and eliminates wire bonds to achieve higher reliability. Other features include a square reverse bias safe operating area, +175°C maximum operating temperature, high peak turn-off capability, positive VCE(on) temperature co-efficient, and a short-circuit rating of 6 ms. Available in die-form only, pricing for the AUIRG7CH80K6B-M begins at $14 each/100,000. For more information, contact Sian Cummins at INTERNATIONAL RECTIFIER, El Segundo, CA. (310) 252-7148.