Designed for highly efficient, low- RDS(ON) power MOSFETs, the V-Tr FET technology developed by SilTerra Malaysia Sdn Bhd and South Sea Semiconductor Ltd. features a narrow-trench gate electrode with a cell density of 488 million per square inch. The companies realized the technology, which is now available for mass production, using an existing production-ready 0.16-µm tool set, fewer masking layers, and smaller trench pitch. This significantly increases the number of dies per wafer and reduces the cost.
Both 20-V P-channel and 20-V N-channel devices can be developed using the V-Tr FET technology, which delvers competitive low RDS(ON) at 3.4 A with a SOT-23 package and 6.0 A with a TSSOP-8 package, respectively, according to the companies. Power MOSFET devices can be used in lithium-ion (Li-ion) battery packs, load switching, power switching, and dc-dc converters to provide portable electronics with energy-efficient power management to prolong battery life.
SilTerra Malaysia Sdn Bhd
www.silterra.com
South Sea Semiconductor
www.southseasemi.com
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