It’s very difficult to create accurate
device-simulation models for advanced
CMOS digital processes. Why? Because
hard-to-model effects like gate accumulation
and tunneling, trap-assisted
tunneling, and halo effects have become
so prevalent at ultra-deep-submicron
technology nodes. For designers of RFcapable
systems-on-a-chip (SoCs), this
has become a critical issue in the accurate
prediction of the behavior of highly
nonlinear RF circuits, such as mixers,
amplifiers, and switches.
To address this challenge, Agilent has
released the first commercially available
HiSIM2.4 model extraction package
for dc and RF parameters for advanced
CMOS device models (see the figure).
The package, for use with Agilent’s
Integrated Circuit Characterization and
Analysis Program (IC-CAP) software
platform, provides an efficient and customizable
method for measuring and
extracting accurate dc and RF parameter
values for the HiSIM2.4 model.
Developed by Hiroshima University
in Japan, the HiSIM2.4 device model
is a next-generation, industry-standard
CMOS compact model for circuit simulation.
Earlier compact models, such as
the BSIM4, were primarily developed
for digital circuits and have limitations
when used for analog and RF applications
at smaller technology nodes. The
HiSIM2.4 calculates the device’s surface
potential, enabling a more accurate
description of the deep-submicron
physical phenomena and resulting in a
more accurate description of the internal
currents and charges.
IC-CAP provides an open and flexible
environment for measuring and extracting
device models for a broad range of
process technologies, including CMOS,
bipolar junction transistor (BJT), and
heterojunction bipolar transistor (HBT)
on silicon and compound semiconductors.
The package lets designers automatically
generate a complete device model
for dc and RF parameters or adapt the
package to meet specific modeling needs.
The HiSIM2.4 Model Extraction Package
provides a high-speed link to Agilent’s
Advanced Design System (ADS)
software. ADS supports the latest version
of the HiSIM2.41 model, which is necessary
to generate an accurate extraction of
dc and RF parameters.
The Agilent HiSIM2.4 Model Extraction
Package is an option with the
IC-CAP 2008 Add-On 1 release. Available
now, prices start at approximately
$22,000.
DAVID MALINIAK
AGILENT EESOF EDA • www.agilent.com/find/eesof