On Semiconductor’s NCP1081 and NCP1083 integrated Power-over-Ethernet Powered Device (PoE-PD)/dc-dc converter controllers meet the upcoming IEEE802.3at PoE+ standard for high-power communications applications. Both devices comply with the current IEEE 802.3af standard. The University of New Hampshire Interoperability Laboratory (UNH-IOL) also has verified them for the recent draft IEEE 802.3at (D3.1) standard, which includes a test of the two-event physical-layer classification. The IEEE 802.3at PoE+ standard addresses the evolving high-power requirements of the wireless local-area network (WLAN) access point, WiMAX, industrial, and Internet Protocol (IP) camera markets.
The company’s complete line of integrated PoE-PD products includes four devices. The NCP1080 and NCP1082 offer IEEE802.3af-compliant power levels. The NCP1081 and NCP1083 provide power levels up to 25.5 W for applications in line with the draft IEEE 802.3at (D3.1) standard and up to 40 W for proprietary high-power PoE applications. The NCP1082 and NCP1083 devices also can provide power via an auxiliary parallel supply.
The PoE-PD product line utilizes On Semiconductor’s automotive qualified, high-voltage SmartPower process. Low on-resistance (RON) and extended temperature range from –40°C to 85°C (with full operation up to 150°C junction temperature) allows these PoE-PD controllers to achieve high power levels while operating in harsh environments.
The NCP1080/1/2/3 are pin-compatible and are housed in a TSSOP-EP 20-pin package. All devices are currently available. Pricing in 1000-unit lots is $1.45 for the NCP1080, $1.48 for the NCP1082, $1.80 for the NCP1081, and $1.85 for the NCP1083. NCP1081/3 evaluation boards are available for $150.
On Semiconductor
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