I've been debating with a guy who argues that a transistor won't work as a transistor
unless its VCE is bigger than its VBE () . He keeps reading this in books. Also, he points
out that if the base and collector are nominally tied together to make a diode, you
might think that it's okay. But actually, he says, the I × R in the collector path makes the VCE lower than the base voltage, so it
won't work. Well, I've been looking in
some of those books, and they sometimes do say that. But when they do,
they're wrong.
When a transistor's VCE is slightly
less than its VBE, it keeps right on
working like a transistor. Can I prove
this? Sure. Look in the NSC linear
Databook at circuits such as the
LM10. The LM10 wouldn't work on a 1.1-V power supply, if the transistors aren't working well with VCE as low as 350 or 250 or even 150 mV, which is far below VBE. Of course, you
have to be a good engineer to make these circuits work well.
NSC guys (like Bob Widlar) have been doing this for 40 years.
Look at the VCE curves of any transistor. When VCE falls below VBE,
it's not a disaster. Put a transistor on a curve-tracer. Apply a bias
like 1 µA per step to the base. When you change the VCE from +1.0
V to 0.6 V to 0.5 or 0.4 V, IC doesn't change much, does it?
Okay, maybe when you get VCE down to 0.35 V, the gain starts to
degrade some. But above that, at room temperature, it's not a big
deal. There is no demarcation between VCE > VBE and VCE BE. No
inflection. The beta doesn't even change more than perhaps 2%
per volt, and it does so smoothly.
Now run the temperature up to 125°C. Can you design a circuit that works up there? It's not easy. But if you don't need a lot
of swing, some specialized circuits work just fine. Look at the
LM4041-1.2 or the LM185. Many of their VCEs are about 0.3 V,
yet they work hot and cold.
How about 160°C? How about 260°C? I can't, but Widlar
could, and did, in the LM12. After all, in the old days, a pentode
could run with a very low VPLATE—much lower than VSCREEN. It's
hard to comprehend this, but after a while, you get to understand
and believe it. It's an analogous situation that the output voltage
is so low, you can't believe it will work. But it's true. It does work.
NEXT TOPIC
When VBE = approximately zero, changes in VBE
certainly have no effect on IC, right? Wrong. In Widlar's LM12,
some of the transistors are so biased, when VBE = 0, the VBE can
still influence the collector current (and vice versa) whether the
VBE is a few millivolts positive or negative.
Admittedly, you can't see this easily in a silicon transistor at room temperature. But you can see this in a silicon transistor at 220°C, or in a
germanium transistor at room temperature, which is about the same
idea. Go ahead and measure it.
When I did, I was impressed by Bob
Widlar's brilliance.
Also, the beta of a transistor can
still be important, even when VBE is
about zero. That's because as VBE
moves up and down a few millivolts
compared to zero, the base current needed may be small, but
finite—not negligible. The base current and its changes are necessary. And if you start at IB = 0 and pull the base negative, the collector current can decrease.
I must remind you that high-beta transistors (300 and up) still
have disadvantages in terms of voltage gain or mu. When the beta
gets too high, and because mu is inversely proportional to beta,
the voltage gain is hurt. I remember a test that asked how much
voltage gain a particular amplifier design has. The answer was
supposed to be 20,000. But the gain was really 9000, as the
betas were too high and the Early Effect was too strong. I passed
the test after I explained my solution.
As a rule of thumb, I use mu × beta = 2 million. On some
devices, that product is only as good as 1 million, or even 4 million on LM194. If the beta gets better, the mu = 1/hRB gets
worse, and the voltage gain suffers. Be careful not to allow in
transistors with too high beta in circuits where poor mu could
cause poor performance. Beta is often important. Too much of it
can do harm. So can too little.
Part one appeared in Electronic Design's Analog Applications Supplement,
June 26, 2000. Go to www.national.com/rap/Story/vbe.html.
Comments invited! rap@galaxy.nsc.com —or:
Mail Stop D2597A, National Semiconductor
P.O. Box 58090, Santa Clara, CA 95052-8090