Bob Pease's Blog

6/23/2009
Bob's Mailbox

HI BOB, I read your response to Arthur Williams in the April 23 column (“Bob’s Mailbox”). The answer as to whether or not to remove the ground plane underneath inductors is: it depends. If the inductors are cans or toroids, it does not matter as the fields are contained inside the inductor. If the inductors are air wound or chip inductors, it might be best to try...... Read the Entire Post Here

Joe Desposito's Blog

10/9/2008
GaN-Based Power Device Signals Next-Gen Power Conversion
(18 Comments)

International Rectifier Corp. has successfully developed a GaN-based (gallium-nitride) power-device technology platform. It’s expected to provide improvements in two key application-specific figures of merit, on resistance and gate charge, of up to a factor of 10 compared to state-of-the-art silicon-based technology platforms. On resistance relates to how much current you can process in a unit area. It also can be related to the cost per amp of processing the power. Gate charge, which is the on resistance multiplied by the charge being switched, deals with how well a device can be used in... Read the Entire Post Here

Mark David's Blog

3/17/2009
IEEE’s 125th Anniversary Celebrates Innovation
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The IEEE recently presented a panel discussion with some of its most esteemed fellows and members to celebrate its 125th anniversary. Panelists included Miguel Nicolelis of the Duke University Medical Center, Katie Hall of WiTricity, Rangachar Kasturi of the University of South Florida, K.J. Ray Liu of the University of Maryland, Dharmendra Modha of IBM's Almaden Research Center Krishna Palem of Rice University, and Roy Want of Intel. ... Read the Entire Post Here

 



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