By Staff, January 18, 2012
Employing silicon carbide (SiC), the RJS6005TDPP Schottky barrier diode is suitable for use in high-output electronic systems such as air conditioners, etc.
By Staff, January 09, 2012
Offering current ratings from 10A to 40A and forward voltages down to 0.51V typical at 20A, the TMBS Trench MOS barrier Schottky rectifiers add 12 45V devices in three power package options.
By Staff, January 06, 2012
The L3G4IS dual-core gyroscope embarks as the market’s first such device capable of handling both user-motion recognition and camera image stabilization.
By Staff, December 01, 2011
Offered as drop-in replacements for SOT723 devices, the DMN2300UFD N-channel and DMP21D0UFD P-channel are the company’s first MOSFETs to wear miniature DFN1212-3 packages.
By Staff, November 15, 2011
The LM48901 configurable spatial processor promises to simplify the design and programming of spatially-enhanced audio systems for multi-speaker portable products.
By Staff, October 10, 2011
Additions to Cree’s 1.2 kV silicon Schottky diode product line includes four surface-mount, TO-252 D-Pak devices with 2A, 5A, 8A, and 10A current ratings.
By Staff, September 30, 2011
The SMV1231-040LF and SMV1233-040LF miniature 0402 varactor diodes are groomed particularly for VCO, phase noise, frequency control, and voltage tuned filter applications including WLAN, CATV low noise block, energy management, wireless infrastructure and military devices.
By Staff, September 14, 2011
Crowned by its maker as the world’s smallest, the L3G3250A three-axis gyroscope measures 3.5 mm x 3 mm x 1 mm.
By Staff, September 02, 2011
Debuting as the latest member of EPC’s second-generation enhanced performance eGaN FET family, the EPC2014 environmentally friendly power transistor is a 1.87 mm2, 40 VDS, 10A device with a maximum RDS (ON) of 16 m? with 5V applied to the gate.
By Staff, July 29, 2011
The SMV1430-040LF miniature 0402 abrupt varactor diode is ideal for VCO, phase noise, frequency control and voltage tuned filter applications requiring low resistance and large capacitance over a narrow 0 to 30 V range.
By Staff, July 05, 2011
In the DFN packages measuring 1 mm x 0.6 mm, Diodes’ latest family of small-signal bipolar transistors promise the same performance as equivalent devices in larger packages.
By Staff, June 13, 2011
The company’s latest GaN HEMT power transistors and high power amplifier (HPA) MMIC achieve typical power-added efficiencies of 60%, translating into a reduction in power consumption up to 20% over comparable devices.
Presented By Maxim
Presented By Datatronics
Presented By Micropower