650V MOSFET Sets New Resistance Benchmark

By Staff, January 17, 2012

According to STMicroelectronics, its new 650V power MOSFET features 0.029O on-state resistance—the lowest for these devices in the standard TO-247 package.

100% Lead-Free MOSFETs Target Auto Applications

By Staff, December 27, 2011

Infineon Technologies has developed an automotive qualified, 100% lead-free power MOSFET.

Buck Power Conversion Demo Board Features eGaN FETs

By Staff, November 01, 2011

The EPC9101 buck power conversion demonstration circuit board from Efficient Power Conversion (EPC) boasts an 8- to 19-V input to 1.2 V, 18-A maximum output current, and 1-MHz buck converter.

Tiny Power MOSFET Boasts Low On Resistance

By Staff, August 17, 2011

The 8-V SiB437EDKT TrenchFET power MOSFET from Vishay Intertechnology offers the industry’s lowest on resistance for a p-channel device with a 1.6- by 1.6-mm footprint and a profile under 0.8 mm, according to the company. Vishay also says that the SiB437EDKT is the only such device to offer an on-resistance rating down to 1.2 V.

MOSFET Design Basics You Need To Know (Part 1)

By Paul Schimel, April 05, 2010

Nuisance dynamic turn-on mechanisms can be the bane of switching power supply designs. Paul Schimel discusses the nuances of these MOSFET bugaboos and how to mitigate them from the start with solid design practices.

Integrating Capacitors onto Integrated Circuits

By Paul Whytock, November 11, 2009

German companies collaborate in a new pan-European research project aimed at making electronic devices more compact and efficient

Build An Efficient 500-W Solar-Power Inverter Using IGBTs

By Wibawa T. Chou, August 13, 2009

IR's Wibowa Chou explains the advantages of 4th-generation IGBTs over MOSFETS with a practical solar inverter application

Seamless Power Switcher And Battery Charger Solution Targets Portable Devices

By Jim Wilson, June 25, 2009

This Idea For Design features a circuit that provides seamless switching between batteries and external power supplies in portable systems. It also provides a simple charging solution and supplies output signals to a microcontroller.

LED Life Standards In And Out Of Luminaires

By Don Tuite, March 26, 2009

Describes U.S. DOE definitions of specifications for useful life, based on falloff of light output, of LEDs used for illumination.

One Powerful Day is Now Available On Demand!

By ED News Staff, March 19, 2009

Figure Of Merit: A Refresher Course

By Don Tuite, February 20, 2009

“Figure of merit” (FOM) is a way of evaluating FETs. It takes into account both their conduction losses and their switching losses. Commonly, it’s calculated as on-resistance (R_(DS)ON) times gate charge (Q_G).

GaN Platform Promises Tenfold Boost In Power

By Michael A. Briere, February 20, 2009

International Rectifier developed a gallium-nitride (GaN) based power-device technology platform that promises figure-of-merit (FOM) performance that’s at least an order of magnitude better than existing silicon MOSFETs. In addition to disclosing the bene