SiC

SiC

Aug. 16, 2012

Product

Electronic Design Europe News Brand

SiC Power MOSFET Features Internal SBD

According to Rohm, its second-generation, high-voltage (1200V) silicon-carbide power MOSFET is the first to integrate a SiC Schottky barrier diode (SBD) in the same package....More
Apr. 2, 2012

Product

Electronic Design Europe News Brand

Test System Meets GaN, SiC, And Si LDMOS Needs

Enhancements to Keithley Instruments’ parametric test system for production parametric test, the S530, have doubled its pin count to 48-pin full Kelvin switching. They also include options for ring oscillator measurement, pulse generation, and low-voltage measurements....More
Mar. 21, 2012

article

Electronic Design

Green-Power Push Leads To High-Voltage SMU 1

Next-generation power semiconductors based on SiC and GaN pose measurement challenges. Keithley Instruments' Model 2657A high-power source-measure unit (SMU) tackles them head-on....More
Mar. 1, 2012

blog

Working with SiC/GaN Power Semis Poses Test Challenges

On the horizon is volume production of gallium nitride-based power semiconductors, which deliver much higher performance over a much wider temperature range than do silicon devices, but also pose some stiff measurement challenges....More
Feb. 18, 2009

article

Electronic Design

Third-Gen Schottkies Eye Motor-Drive/Renewable-Energy Apps

Infineon’s third generation thinQ! SiC Schottky diodes claim to deliver the industry's lowest capacitance for any given current rating. Target applications include active PFC in switched-mode power supplies and other ac-dc and dc-dc topologies such as sol...More

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