A 650-V superjunction MOSFET technology introduced by Infineon offers an RDS(on) of 19 mΩ in a TO-247 package and 45 mΩ in TO-220 and D2PAK packages....More
The fourth pin in the TO-247 package acts as a Kelvin source which can be used to reduce the parasitic inductance of the source lead of the power MOSFET....More
Designed specifically for Power over Ethernet (PoE) applications, NXP’s latest NextPower Live MOSFET family provides twice the level of inrush current capability of existing MOSFETs....More
Infineon’s DrBlade is the first integrated dc-dc driver and MOSFET VR power stage to be implemented in the company’s Blade chip-embedded package technology, which replaces wire or clip bonding and moulding techniques with galvanic processes....More
Ultra low on-resistance reduces conduction losses, translating into lower power consumption and longer battery life. The compact footprint and less than or equal to 0.55 mm profile of both power packages enables...More
Offered as drop-in replacements for SOT723 devices, the DMN2300UFD N-channel and DMP21D0UFD P-channel are the company’s first MOSFETs to wear miniature DFN1212-3 packages....More
Debuting in the company’s PQFN package, the IRFHSxxxx HEXFET power MOSFETs target low-power designs including smartphones, tablet PCs, camcorders, etc....More