Gallium-nitride (GaN) FETs have inherently superior performance versus traditional silicon FETs. This advantage in performance enables design engineers to push the envelope in power designs and reach new levels of power density and efficiency. Applications range from ac-dc power supplies to multi-kilowatt, three-phase converters.
GaN Power Density in the Data Center
GaN technology enables energy-efficient power supplies for data-center servers. GaN power transistors reduce the weight, size, and cost of data-center power designs while also reducing energy consumption. GaN’s high-speed switching enables market trends like ultra-thin power supplies, motor-drive integrated robotics, and the ability to achieve greater than 200% more power density in next-generation data centers.