Learn about the benefits of real-time variable gate-drive strength, a new feature in isolated gate drivers that enables designers to optimize system parameters that impact EV operating range and reliability.

Take advantage of higher switching frequencies with this ultra-low latency C2000™ real-time microcontroller supporting the use of GaN and SiC technologies.

Improve system efficiency and reliability while reducing cost and size with TI’s latest SiC/IGBT isolated gate driver featuring real-time variable gate drive strength and integrated diagnostics for functional safety.

Simplify your design and reduce board space with this 650-V 170/248-mΩ GaN half-bridge with integrated driver, protection and current sense intended for <75-W active-clamp flyback (ACF) converters in switch mode power supply applications.

Achieve high density with low emissions with this automotive-qualified, high isolation voltage DC/DC power module designed to provide power to IGBT or SiC gate drivers.

See how innovations in high-voltage technologies, including high-voltage power conversion, sensing for high-voltage designs, high-voltage isolation and high-voltage real-time control, help create a more efficient future for us all.

Learn why gallium nitride (GaN) is replacing silicon in a growing list of applications that require greater power density and energy efficiency.

Advance the performance of your EV traction inverter system with a 800-V, 300-kW SiC-based traction inverter reference design developed by Texas Instruments and Wolfspeed.

Enable real-time variable gate drive strength on the UCC5880-Q1 evaluation module designed to drive high power SiC MOSFETs and IGBTs in HEV/EV applications. UCC5880-Q1 features a split output dual driver for high flexibility in gate drive strength.