As GaN replaces silicon MOSFETs in high-voltage industrial applications, each type of GaN FET (depletion mode, enhancement mode and cascade to cathode mode) comes with its own gate-driver and system requirements. Learn how to choose the right GaN FET to maximize the power density of your design.

Take advantage a 600-V, 30mOhm GaN FET with an integrated fast-switching driver, internal protection and temperature sensing to achieve high performance while reducing board space in your design. Also available in 50-mΩ option.

Double the power density of your high-voltage applications with top-side cooled QFN package GaN FET with integrated driver, protection and active power management. Reduce the size of power magnetics by 59% compared to existing solutions and achieve 99% efficiency with this 650-V, 30mOhm FET.

Learn about the fundamental characteristics that make GaN a good fit for applications where high power density is critical, such as server and telecom; 1-phase 400-V onboard chargers (OBCs) in electric vehicles (EVs); and <100-W consumer power adapters.

Power factor correction (PFC) is mandatory in every electrical or electronic product consuming more than 75 W. Watch this 30-minute training video to learn the key steps for designing high-density (>155-W/in3) and high-efficient (99%) totem-pole PFC with TI GaN.

Check out this reference design for implementing a three-level, three-phase, GaN-based ANPC inverter power stage with high power density and fast switching frequency of 100 kHz. The multilevel topology allows for the use of 600-V rated power devices at higher DC-bus voltages of up to 1000 V.

Still wondering if GaN is reliable? Read this paper to learn about GaN reliability standards and see how TI ensures lifetime reliability of its GaN products through a comprehensive in-house program, application reliability validation and the industry support of new GaN standards.