Products of the Week: LiDAR-on-a-Chip, Space-Saving Hall-Effect Sensors

Sept. 8, 2023

Starting a new design project? Check out some of the latest electronic products to hit the market.

Up to 1200-V SiC MOSFETs Slash Switching Losses

The latest generation of SiC MOSFETs from Toshiba come enclosed in four-pin packages that reduce losses in a wide range of industrial systems. Targeted applications include switch-mode power supplies (SMPS) for servers and data centers, electric-vehicle (EV) charging stations, photovoltaic (PV) inverters and uninterruptible power supplies (UPS).

For the first time in its product line, Toshiba said the TWxxxZxxxC series features a four-pin TO-247-4L(X) package that reduces switching loss in devices with drain-source (V_DSS) ratings of 650 V up to 1200 V. The new package enables Kelvin connection of the signal source terminal for the gate drive. As a result, the package is effective at reducing the impact of source wire inductance, improving the high-speed switching characteristics of the FET. The SiC MOSFETs are also capable of delivering continuous drain currents (I_D) of up to 100 A.

For the TW045Z120C, the turn-on loss is approximately 40% lower, while the turn-off loss drops by approximately 34%, compared with Toshiba’s TW045N120C, which is housed in a three-pin TO-247 package. The typical drain-source on-resistance (R_DS(on)) of the devices ranges from between 140 and 15 mΩ. When paired with low gate-drain charge (Q_GD), it can minimize losses even in high-frequency operation.

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This roundup includes a high-voltage SiC MOSFET in a four-pin package that minimizes switching losses and a new high-density DDR5 DRAM memory based on 12-nm process technology. The first commercial optical beamsteering chip for solid-state LiDAR sensors is also featured, along with an optical digital signal processor (DSP) for 800-Gb/s pluggable modules.

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