500-mA RET Suited for Load Switching in Consumer Devices
Nexperia launched a series of 500-mA dual resistor equipped transistors (RETs) that are tuned for load switching in wearables and smartphones as well as for use in digital circuits with high-power demands.
The chips integrate dual bipolar junction transistors (BJTs) and a bias resistor in the same leadless DFN package. They also have a second integrated resistor parallel to the base-emitter path to create a voltage divider that sets the base voltage. Since these internal resistors have higher tolerances than external resistors, RETs are suitable for switching applications where transistors operate in an on- or off-state, helping to overcome the temperature dependence of standard BJTs.
RET devices in the series are available in dual NPN/NPN, NPN/PNP and PNP/PNP configurations. The parts fully deliver 500-mA output current from a tiny DFN2020(D)-6 package measuring only 2 × 2 × 0.65 mm. The packaging is specially designed for high thermal performance in high-power systems, as it can supply up to 1 W of total output power from collector-emitter voltages (VCEO, open base) up to 50 V.
Nexperia said the new RET devices come as standard and automotive-grade (AEC-Q101 qualified) parts.
