GaN-Based Power-Supply IC is Upgraded to 1,250 V
A new gallium-nitride (GaN) power-supply IC features a single 1,250-V switch based on Power Integrations’ proprietary PowiGaN technology. The InnoSwitch3-EP 1250-V is the latest member of the company’s InnoSwitch family of off-line CV/CC flyback switcher ICs, which unite synchronous rectification, FluxLink isolated technology for feedback, and a wide range of high-voltage GaN switches (750, 900, and now 1,250 V).
The switching losses of its 1,250-V PowiGaN technology are said to be less than 1/3 of the power losses in equivalent silicon MOSFETs operating at the same voltage. This results in power efficiency as high as 93% when used to convert power from one level to another, enabling highly compact flyback power supplies that can supply up to 85 W without a heatsink to keep everything cool, said Power Integrations.
Customers using the new power supply can specify an operating peak voltage of 1,000 V, which allows for industry-standard 80% derating from the 1,250-V absolute maximum. This gives them enough headroom for industrial-grade power supplies and is valuable in challenging power-grid environments, where robustness is an essential defense against grid instability, surge, and other power perturbations.
Said Radu Barsan, VP of technology at Power Integrations, "Our ongoing development of higher-voltage GaN technology, illustrated here by our new 1,250-V devices, extends the efficiency benefits of GaN to an even wider range of applications, including many currently served by silicon-carbide technology.”
Pricing for the new product in the INSOP-24D package starts at $3.00 in 10,000-unit quantities.
