New MOSFETs Built for the Future of Power Electronics

Jan. 26, 2024

Check out some of the latest power MOSFETs to hit the market.

Auto-Grade Power FETs Go with Gull-Wing Packages

Toshiba Electronics unveiled a family of automotive-grade 40-V N-channel power MOSFETs that unites its latest U-MOS IX-H process with a new L-TOGL (Large Transistor Outline Gull-wing Leads) package.

The first chips in the family, the XPQR3004PB and XPQ1R004PB, feature a high drain current rating with low on-resistance, while the new packaging lends itself to more effective removal of heat from a system.

By unifying the source connective part and outer leads with a copper clip, the L-TOGL package lacks an internal post construction. A multi-pin structure for the source leads decreases package resistance to about 30% of the existing TO-220SM(W) package, pushing the drain current rating of XPQR3004PB to 400 A—1.6X higher than its predecessor. Use of a thick copper frame cuts channel-to-case thermal impedance in the XPQR3004PB to 50% that of its predecessor, saving power.

Toshiba also rolled out 40-V power MOSFETs in a small TOGL package called the S-TOGL that also offer high current density while safely distributing power to safety-critical systems in cars. Under the hood is a harsh environment for chips, so the reliability of solder joints in surface mounting is vital. The FETs use “gull-wing” leads that reduce mounting stress, improving the reliability of the solder joint.

The first power MOSFETs based on the S-TOGL package measure 7.0 × 8.44 × 2.3 mm and feature the same characteristics as the larger L-TOGL package. The new chips can deliver a V_DSS rating of 40 V.

The XPJR6604PB is rated for a continuous drain current (ID) of 200 A, while the XPJ1R004PB is rated for 160 A. They’re rated for pulsed current (IDP) at 3X these values at 600 and 480 A, respectively. The 200-A rating is higher than what’s possible with MOSFETs based on Toshiba’s 6.5- × 9.5-mm DPAK+ package. Designed to handle harsh temperatures (T_ch) as high as 175°C, they’re AEC-Q101 qualified.

Slide 4 of 9

Innovation in the world of power electronics comes from many sources, including new materials, more advanced power-supply topologies, optimized passive components, packaging, and cooling technologies. But some of the biggest impacts stem from the MOSFETs at the heart of it all.

In that context, leading players in the power semiconductor market are upping the ante with a new generation of power MOSFETs that are optimized inside-out for higher efficiency, faster switching rates, and superior heat dissipation. These power devices tap into innovations in everything from the internal structures to the packaging to help address the unique challenges in sectors ranging from data centers—which are under pressure from new power-hungry AI processors and GPUs—to industrial motor drives, solar inverters, and the electric vehicle.

The power electronics landscape is evolving. New materials—silicon carbide (SiC) and gallium nitride (GaN)—continue to raise the bar for power density and switching rates. SiC is rapidly transforming into the power semiconductor of choice for EV traction inverters and the renewable-energy market. GaN power FETs are the gold standard for fast charging of smartphones and laptops. But defeating the silicon MOSFET that has dominated for decades is a daunting task.

Here are some of the latest power MOSFETs to reach the market in recent months. The new offerings are a motley group, covering virtually any situation where you need to convert or distribute power fast and efficiently.

Check out the previous Products of the Week gallery here.

You can also visit the Products of the Week archives here.

About the Author

James Morra | Senior Editor

James Morra is a senior editor for Electronic Design, covering the semiconductor industry and new technology trends, with a focus on power electronics and power management. He also reports on the business behind electrical engineering, including the electronics supply chain. He joined Electronic Design in 2015 and is based in Chicago, Illinois.