New MOSFETs Built for the Future of Power Electronics

Jan. 26, 2024

Check out some of the latest power MOSFETs to hit the market.

12-V MOSFET Brings More Durable Packaging for Fast Charging

Advanced packaging plays a central role in the success or failure of any power semiconductor.

Alpha and Omega Semiconductor (AOS) rolled out its latest dual-channel 12-V MOSFET in a high-durability “molded rigid” CSP package for bidirectional MOSFETs used in lithium-ion (Li-ion) battery management.

Unlike standard wafer-level chip-scale packaging (WLCSP), where the die serves as the package and uses a thick substrate for durability, the new package is significantly thinner. It reduces parasitic resistance and delivers ultra-low on-resistance with electrostatic-discharge (ESD) protection to handle higher charging currents. Specifically, the AOCR33105E can be used at the heart of a protection switch or mobile battery charging and discharging circuits to protect battery packs from aberrant conditions such as short circuits.

When the power FETs are connected in a common-source or a common-drain configuration, the thick substrate in a standard WLCSP package is a major contributor to total resistance. Using a thinner package limits the overall resistance, but it also drastically reduces durability. The lack of mechanical stability raises the risk of warping or cracking the silicon when it’s being attached to the circuit board.

With a source voltage (V_SS) of 12 V and gate-to-source (V_GS) voltage of 8 V, the N-channel power FET fits in a footprint of 2.08 × 1.45 mm and reduces source-to-source resistance (R_SS) to less than 3 mΩ at 4.5 V.

Slide 7 of 9

Innovation in the world of power electronics comes from many sources, including new materials, more advanced power-supply topologies, optimized passive components, packaging, and cooling technologies. But some of the biggest impacts stem from the MOSFETs at the heart of it all.

In that context, leading players in the power semiconductor market are upping the ante with a new generation of power MOSFETs that are optimized inside-out for higher efficiency, faster switching rates, and superior heat dissipation. These power devices tap into innovations in everything from the internal structures to the packaging to help address the unique challenges in sectors ranging from data centers—which are under pressure from new power-hungry AI processors and GPUs—to industrial motor drives, solar inverters, and the electric vehicle.

The power electronics landscape is evolving. New materials—silicon carbide (SiC) and gallium nitride (GaN)—continue to raise the bar for power density and switching rates. SiC is rapidly transforming into the power semiconductor of choice for EV traction inverters and the renewable-energy market. GaN power FETs are the gold standard for fast charging of smartphones and laptops. But defeating the silicon MOSFET that has dominated for decades is a daunting task.

Here are some of the latest power MOSFETs to reach the market in recent months. The new offerings are a motley group, covering virtually any situation where you need to convert or distribute power fast and efficiently.

Check out the previous Products of the Week gallery here.

You can also visit the Products of the Week archives here.

About the Author

James Morra | Senior Editor

James Morra is a senior editor for Electronic Design, covering the semiconductor industry and new technology trends, with a focus on power electronics and power management. He also reports on the business behind electrical engineering, including the electronics supply chain. He joined Electronic Design in 2015 and is based in Chicago, Illinois.