GF Partners with Navitas to Produce New Generations of GaN Power ICs

GlobalFoundries will work with Navitas Semiconductor as part of a “technology and foundry partnership” to jointly develop new gallium-nitride (GaN) power devices vying to replace silicon in everything from AI data centers to electric vehicles.

Under the long-term agreement, the companies plan to co-develop GaN power ICs and mass-produce them at GF’s fab in Burlington, Vermont, leveraging the site’s expertise in high-voltage GaN-on-silicon technology. GaN is trending in parts of the power industry where silicon has hit its performance limits. GaN power ICs built by Navitas and others are touted to have higher efficiency, faster switching frequencies, and smaller footprints than silicon MOSFETs.

“GaN is transforming how the world moves power. And this partnership represents a significant step forward for U.S. semiconductor leadership and the deployment of GaN technology to address essential applications,” said Tim Breen, the CEO of GlobalFoundries. “By joining forces with Navitas, we are enabling a secure and sustainable supply chain for GaN technologies that power the future of AI, energy, and industrial innovation.”

The partnership represents the latest shakeup in the market for GaN power devices. TSMC, one of the largest foundries for GaN power devices, plans to phase out its power GaN manufacturing in the next several years. Last month, GF said it has licensed TSMC’s 80- and 650-V GaN manufacturing processes, with plans to get them up and running in its Burlington fab. Navitas, which has worked closely with TSMC for over a decade as one of its top GaN customers, has started to shift to new foundry partners, including GF, as a result.

GF said development work with Navitas is set to start in early 2026, with production expected later that year.

GaN Power ICs Trend Up in Power Electronics

The deal comes as GaN cuts into the silicon-dominated power electronics industry. The market for power GaN devices is expected to reach $3 billion globally by 2030, according to technology research firm Yole Group.

One of the key characteristics of GaN power chips is the relatively high mobility of electrons in the channel, which runs under the device’s gate and through which current flows between the source and the drain. Thus, it significantly accelerates switching frequencies versus silicon, which in turn enables more efficient power conversion as well as a reduction for the magnetics and passives in the system, saving costs at a system level.

Navitas is now one of the leading players in GaN power ICs, which are already the gold standard in fast chargers for smartphones and other consumer electronics. It was one of the first fabless companies in the space, supplying its GaNFast power ICs manufactured by TSMC to the likes of Anker for close to a decade. But the Torrence, California-based startup is also working to push GaN to higher power levels with its GaNSafe series.

Navitas struck deals with Enphase Energy to deploy GaN in solar and other renewable-energy systems, and it’s supplying the first GaN power chips to be used in onboard chargers (OBCs) for electric vehicles.

The company is also keen on developing advanced power solutions tailored to AI server racks. It’s one of several companies collaborating with NVIDIA on its high-voltage DC (HVDC) architecture for distributing power to kilowatt-class AI chips. Along with silicon carbide (SiC), GaN is poised to play a central role in future server power supplies because it offers better efficiency at higher frequencies, enabling higher power density without compromising conversion efficiency.

Navitas has been moving its manufacturing capacity out of TSMC in recent months. TSMC said it plans to wind down its GaN manufacturing operations by mid-2027 as part of the strategy to focus on more advanced, high-margin AI chips.

The company’s retreat from the power transistor market has forced Navitas and other fabless chip companies to explore new foundry options. Shortly after TSMC announced its exit plans, Navitas said it partnered with Powerchip (PSMC) to manufacture its GaN power ICs on 200-mm wafers at the company’s fab in Taiwan. Navitas intends to start mass production of its 100-V family of GaN power ICs at PSMC in the first half of 2026, while 650-V power devices will transition from TSMC in the following 12 to 24 months.

Filling the Foundry Gap for GaN Power Devices

GF, which has been building out manufacturing processes for GaN power devices on 200-mm silicon wafers at its main fab in Burlington, Vermont, looks to fill the gap in the foundry landscape left behind by TSMC.

The tie-up with TSMC and foundry partnerships with Navitas and others will help it speed up development and scale up its production of robust, reliable GaN power devices, ensuring capacity for the broader industry. The high-voltage 650-V process is aimed at power adapters, motor controllers, as well as solar inverters and other renewable-energy equipment — all systems with strict energy-efficiency requirements. On the other hand, the mid-voltage 80-V manufacturing nodes will be aimed at power systems in servers and laptops. 

At a time when trade policy in the semiconductor and electronics industries continues to evolve, GF said the partnership with Navitas will boost its efforts to develop “a U.S. pathway” for power GaN production.

By bringing together GF’s manufacturing capabilities and Navitas’ leadership in GaN power IC design, this partnership will provide customers with advanced, secure, and scalable GaN solutions, according to both companies.

Chris Allexandre, president and CEO of Navitas, said “the tie-up with GF will make sure that it can deliver the performance, efficiency, and scale our customers demand and to manufacture those solutions in critical and national security applications in the U.S.” He added, “Together, we are building a foundation for next-generation applications that are critical to national competitiveness and energy sustainability.”