Expanding the company's portfolio of MOSBD devices, which integrate a power MOSFET and a Schottky barrier diode on a single die, are two MOSBDs for high use in high-efficiency dc/dc converter applications. The devices employ fifth-generation U-MOS V process technology that enables lower on-state resistance for low-side MOSFETs and faster switching for high-side MOSFETs. Each includes aluminum strap (Al-Strap) connections rather than conventional wire-bond technology to further reduce on-state resistance. The TPCA8A02-H features a drain-source voltage of 30V, maximum drain current of 34A, typical on resistance of 4.8 milliOhms, and an SOP Advance package measuring 5 mm x 6 mm x 0.95 mm. The TPC8A03-H specifies a drain-source voltage of 30V, maximum drain current of 15A, a typical on resistance of 5.1 milliOhms, and comes in an SOP-8 package measuring 5 mm x 6 mm x 1.6 mm. Sample prices for the TPCA8A02-H and TPC8A03-H are $0.55 and $0.50 each, respectively. TOSHIBA AMERICA ELECTRONIC COMPONENTS INC., San Jose, CA. (408) 526-2400.

Company: TOSHIBA AMERICA ELECTRONIC COMPONENTS INC.

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