Small-Signal MOSFETs Feature Low On-Resistance

A wide-ranging family of small-signal MOSFETs (S-MOS) from Toshiba America Electronic Components features a low on-resistance and capacitance, which make them suitable for high-speed switching devices or dc-dc converters in portable electronics. The devices meet the need for smaller internal power losses and lower operating voltages in applications with medium output-current ranges. The S-MOS family includes 17 six-pin devices (SSM6K- and SSM6J-) designed for 0.5-A to 2.5-A load switching applications and dc-dc converters operating at 0.5 to 1 MHz. Also, 20 three-pin devices (SSM3K- and SSM3J-) are suitable for 0.5- to 4.0-A switching applications.

The six-pin devices, with on-resistances from 30 mΩ to 400 mΩ come in a 1.6- by 1.6- by 0.55-mm package (ES6). The three-pin devices feature on-resistances from 100 mΩ to 400 mΩ and are offered in a 2.8 by 2.9- by 0.7-mm package (TSM). N- and p-channel polarities (designated with K and J part numbers, respectively) are available in either package. To support a wide range of design requirements, the six-pin S-MOS family includes n-channel devices with drain-source voltages of 20 or 30 V and driving voltage of 1.8, 2.5, or 4 V, and p-channel devices with a −12-, −20-, or −30-V drain-source voltage and a driving voltage of 1.5, 1.8, 2.5, or 4 V. The three-pin S-MOS family includes n-channel devices with a drain-source voltage of 20, 30, or 60 V and driving voltage of 1.8, 2.5, or 4 V, and p-channel devices with −12, −20, or −30 V drain-source voltage and driving voltage of 1.8, 2.5, or 4 V.