Two new Airfast RF power LDMOS transistors from Freescale, the AFT27S006N and AFT27S010N, cover all major cellular infrastructure bands while delivering 20 to 24 dB of gain in a compact package. The AFT27S006N delivers 6 W of peak power (0.76 W avg.) and is the next-generation of the MW6S004N, a workhorse driver deployed in wireless infrastructure installations worldwide. The AFT27S010N is a higher power device delivering 10 W of peak power (1.26 W avg.). Both devices operate from 28 Vdc and feature a 728 to 2700 MHz frequency range and single-stage gain (20 to 24 dB), together with an ultra-small footprint package (PLD-1.5 W), suiting them for macro base station MIMO applications rated up to 40 W average power. The broad frequency range of the new transistors enables them to also be used as universal driver devices for a wide array of additional RF applications. The AFT27S006N and AFT27S010N Airfast RF power transistors are in production now.

FREESCALE SEMICONDUCTOR INC.