Spin-torque magnetoresistive random access memory (ST-MRAM) is emerging as the most promising of the next-generation memory technologies. ST-MRAM is persistent, as a result of storing data when the power is off. It’s fast, reading and writing at DRAM and even SRAM cache speeds. On top of that, the memory is cost-effective—it uses a small single-transistor bit-cell and requires only two or three additional masking steps...
Register or Sign in below to download the full article in .PDF format, including high-resolution graphics and schematics when applicable.
Register for Complete Access (Valid Email Required)
By registering on Electronic Design now, you'll not only gain access to premium content, you'll also become part of a robust engineering community. Gain access to the complete 2016 Salary & Career Report when you register now.
Joining the Electronic Design community also allows you to:
- Become a member of a group of exclusive Engineers
- Participate in Expert and Reader driven Q&A's
- Start your own conversation by commenting on any article or blog
- Communicate and network with other Engineers from all over the world
- Gain access to high-quality content