20-V MOSFET Offers Low RDS(ON) In Tiny Package

A new 20-V p-channel TrenchFET Gen III MOSFET offers the lowest on-resistance available in the PowerPAK 1212-8 package, according to the company. The Si7615DN has an R_DS(ON) of 3.9 mO at 10 V, 5.5 mO at 4.5 V, and 9.8 mO at 2.5 V. The Si7615DN will be used as the adaptor switch and for load switching applications in notebook computers, netbooks, and industrial/general systems. Adaptor switches, which switch between the adaptor/wall power and the battery power, are always on and drawing current. The lower on-resistance of the Si7615DN translates into lower power consumption, saving power and prolonging battery life between charges. The Si7615DN eliminates the need to rely on 30-V power MOSFETs, which until recently were the only p-channel devices available within this very low on-resistance range. Among competing 30-V devices, the lowest available p-channel on-resistance with the area of the PowerPAK 1212-8 (3.3 by 3.3 mm) is 14.4 and 27 mO at gate drives of 10 V and 4.5 V, respectively. The Si7614DN is 100% Rg-tested and halogen-free in accordance with IEC 61249-2-21. Samples and production quantities are available now, with lead times of 10 to 12 weeks for larger orders. Prices start at $0.44 in quantities of 100,000. VISHAY SILICONIX, Malvern, PA. (619) 336-0860.