High-voltage, medium-current diodes eye auto applications

Nov. 17, 2004
For automotive applications, among others, STTH series diodes from STMicroelectronics Inc. combine the ability to handle high voltage (between 800 V and 1200 V) and low current (1 A to 3 A) with medium recovery times (not more than 75 ns) and the best possible ratio of forward voltage drop (VF) to leakage current (IR).

For automotive applications, among others, STTH series diodes from STMicroelectronics Inc. combine the ability to handle high voltage (between 800 V and 1200 V) and low current (1 A to 3 A) with medium recovery times (not more than 75 ns) and the best possible ratio of forward voltage drop (VF) to leakage current (IR).

The STTH parts are built with a planar, platinum-doped silicon that helps optimize the combination of VF, IR and reverse recovery time (trr).

The platinum doping process reduces leakage current by approximately 100 times vs. gold doping, thus providing the scope needed to improve VF at a given trr and creating a useful temperature margin with regard to the thermal runaway phenomenon. Optimization of the forward voltage drop cuts the power losses of the clamping functions in standby mode.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!