8/6/2003
By Ashok Bindra, Editor, PETech
Discrete Power Semiconductor Supplier Eyes SiC Diodes
Aiming to tap the benefits of zero-recovery current and negligible switching losses with high temperature capability of silicon carbide (SiC)-based Schottky diodes, discrete power semiconductor supplier Advanced Power Technology (APT) has inked a licensing deal with Cree Inc. Under this agreement, APT will purchase Cree’s SiC zero-recovery Schottky diode dies, and produce packaged devices and modules under its own brand name.
Using alternative packaging and innovative engineering, APT intends to address market segments not served by Cree. In addition, it will explore military, industrial, communications, semiconductor equipment, and medical applications for its SiC Schottky diodes and other designs created using these high-performance diodes. According to Glenn Wright, APT’s vice president of marketing and business development, APT intends to explore applications where low losses are critical and cost is warranted. This marks APT’s first offerings in SiC, said Wright.
In addition to standard plastic packages, the SiC diodes will be available in hermetic and high-performance packages. The plastic packages will be assembled in the Philippines, while the hermetic and advanced packages will be produced in the company’s facilities in Bend, Ore., and Bordeaux, France. APT will use its expertise in high-power semiconductor manufacturing to offer multidie parallel discrete devices in TO-220, TO-247, D2, D3, and SOT-227 packages, as well as hermetic packages with and without military screening. The dual-die packages will offer common cathode configuration. Furthermore, the supplier will offer the latest generations of MOSFETs and IGBTs built in combination with the SiC Schottky diodes in both boost and buck configurations. Power modules and other custom designs using the SiC zero recovery Schottky diodes will also be offered.
All SiC-based diodes in plastic packages will be rated at 175°C, while hermetic and high-performance packages will be rated at higher temperatures. Due to higher band gap property, these devices will offer extremely low leakage at elevated temperature. Other features include high thermal conductivity, faster switching speed compared to silicon diodes, and 600V to 1200V breakdown capability.
APT is already in sampling mode of 6A and 10A SiC Schottky diodes in plastic packages with plans to take these into production in the fourth quarter.
For more information, visit www.advancedpower.com.
