8/18/2003
Edited by PETech Staff
Power Hermetic MOSFETs
Advanced Power Technology’s new generation of high-voltage MOSFETs, designated POWER MOS 7®, is now available in a hermetic, discrete package. POWER MOS 7 has up to 60% lower total gate charge (Q
g) than the current POWER MOS V® generation devices. In addition, POWER MOS 7 has up to a 30% reduction in On-Resistance (R
DS), resulting in up to a 20% increase in maximum current carrying capacity (I
D). Overall, these devices offer an extremely low combined power loss Figure of Merit, R
DS(on) X Q
g, enabling smaller, more efficient, and more reliable power conversion.
For more information, visit www.advancedpower.com.
