A power MOSFET chipset from Renesas Technology enables dc-dc converters to stepdown a 12-V input to a 1.3-V, 20-A output with 90% efficiency. That represents a 2.5% improvement in efficiency versus results obtained with previous Renesas MOSFETs.
The new chip set consists of the RJK0305DPB high-side MOSFET and the RJK0301DPB low-side MOSFET. These transistors are ideal for dc-dc converters that convert a 12-V or 19-V input to a 0.8-V to 2.5-V output. The improved performance of these MOSFETs is achieved through an advanced trench manufacturing process that has been tuned for the intended applications.
In the RJK0305DPB high-side device, drain-gate charge (Qgd) has been lowered by approximately 15% from that of the previous Renesas MOSFETs. This enhancement reduces the switching loss experienced at higher frequencies. In addition, the RJK0301DPB features approximately 20% lower on-resistance than previous devices, which reduces conduction losses in the low-side FET. Both MOSFETs are packaged in the company’s LFPAK.
For the RJK0305DPB, other key specs include a max VDSS of 30 V and a max ID of 30 A. RDS(on) for this device at a VGS of 4.5 V is 8.4 mΩ, typ and 11.0 mΩ, max, while Qgd is 2.2 nC.
For the RJK0301DPB, other key specs include a max VDSS of 30 V and a max ID of 60 A. RDS(on) for this device at a VGS of 4.5 V is 2.7 mΩ, typ and 3.5 mΩ, max, while Qgd is 8.0 nC.
Renesas Technology will continue to extend its line of power MOSFET products employing the newly developed process. The development of SOP-8 mounted models is underway, as are 60-V and 100-V VDSS products. These future devices will expand the range of applications to encompass isolated dc-dc converters.
Pricing for the RJK0305DPB is $1 each in quantities of 10,000, with samples available starting in June. Pricing for the RJK0301DPB is $1.50 each in quantities of 10,000 with samples available starting in June.
For more information, visit www.renesas.com.
