Start-up Plans Silicon Carbide Power Transistors

Nov. 16, 2005
A spin off from the Royal Institute of Technology KTH, TranSiC, is a new silicon carbide component manufacturer. The company's founders have extensive experience in SiC component R&D, and the results from their KTH research will be available next year as commercial products.

A spin off from the Royal Institute of Technology KTH in Kista, Sweden, TranSiC, Stockholm, Sweden, is a new silicon carbide (SiC) component manufacturer. The company’s founders have extensive experience in SiC component R&D, and the results from their KTH research will be available next year as commercial products.

The first product will be a TO-220 packaged SiC bipolar power transistor. Preliminary specifications for this transistor include a max voltage of 1200 V, a max current rating of 2 A, and a max operating temperature of 175°C. An evaluation circuit board with driving circuitry will be designed and distributed to interested customers before the end of the second quarter of 2006.

For more information contact [email protected] or see www.transic.se.

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