600-V SJ MOSFET Adds Diode for Ruggedness and Reliability
According to Magnachip, its latest 600-V superjunction (SJ) power MOSFETs offer a big boost in power density thanks to a combination of its 180-nm process node and more advanced internal structure.
The new offerings improve on the company’s previous generation of SJ MOSFETs by narrowing the cell pitches by 50% and reducing the on-resistance (the resistance value between the drain and the source of MOSFETs during on-state operation) by 42%. As a result, this product comes in the same DPAK package as its predecessor while offering a very low RDS(on) of 175 mΩ. Moreover, the total gate charge is cut by approximately 29% relative to the prior generation, resulting in reduced power losses during switching.
In addition, a Zener diode is embedded between the gate and the source to strengthen the ruggedness and reliability of the MOSFET and prevent it from sustaining damage caused by external current surges or electrostatic discharges (ESD). With its high efficiency and reliability, Magnachip said the new 600-V SJ MOSFET can be used in a wide range of electronics, including data-center servers to laptop fast chargers.