A new series of LTE LNAs and Quad LNA banks, the BGA7x1N6 and BGM7xxxx4L12 families, are specially designed by Infineon to enhance the data rate in smartphones. The series includes built-in ESD protection, and with their low noise figure, the products provide the gain and high linearity needed to help smartphone designers overcome SNR challenges. The LNAs and LNA banks are located in both the diversity and main antenna path of the phone, and boast a typical sensitivity improvement of 3.4 dB and data rates that are up to 96% higher compared to devices without LNAs. High linearity assures optimal signal reception even in conditions of poorly isolated antenna and long line losses between antenna and transceiver. The three LTE LNAs and seven Quad LNA bank families address the required band configurations for different world regions: low (L) 0.7 to 1.0 GHz, mid (M) 1.7 to 2.2 GHz, and high (H) 2.3 to 2.7 GHz. The BGA7x1N6 LTE LNA (1.1 mm x 0.7 mm) and BGM7xxxx4L12 Quad LNA bank (1.9 mm x 1.1mm) are shipped in ROHS compliant TSNP-6-2 or TSLP 12-4 plastic packages.
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