Complementary MOSFETs Feature High Gate Impedances

Aug. 23, 2006

Advanced Linear Devices' ALD1115 is a monolithic IC consisting of a complementary N-channel and a P-channel MOSFET designed for a broad range of precision analog applications which require high current gain.

Advanced Linear Devices’ ALD1115 is a monolithic IC consisting of a complementary N-channel and a P-channel MOSFET designed for a broad range of precision analog applications which require high current gain. The ALD 1115 is manufactured with the company’s enhanced ACMOS silicon gate CMOS process and offers high input impedance of 10¹³ Ω and negative current temperature coefficient.

This makes the device ideally suited for precision signal switching and amplifying applications in +1-V to +12-V systems where low input bias current, low input capacitance and fast switching speed are desired. Gate input leakage current is specified at 30 pA maximum at room temperature.

The ALD1115 Complementary N-Channel and P-Channel MOSFET is available now in 8-pin MSOP, plastic dip and SOIC packages and has a low-threshold voltage of 0.7 V for both N-channel and P-channel MOSFETS. Pricing starts at $0.75 in quantities of 1000 pieces.