Powerelectronics 2959 121514gansystems

High Power GaN Transistors

Dec. 23, 2014
GaN Systems Inc. introduced several gallium nitride power transistors based on its proprietary Island Technology®, which produces highly efficient, smaller transistors at lower cost than traditional silicon MOSFETs and IGBTs.

GaN Systems Inc. introduced several gallium nitride power transistors based on its proprietary Island Technology®, which produces highly efficient, smaller transistors at lower cost than traditional silicon MOSFETs and IGBTs. GaN Systems' devices feature intrinsic fast switching and dense current carrying capability, further enhanced by the company's GaNPX packaging, which has no wire bonds, minimizing inductance and thermal resistance and increasing reliability.

These new devices from GaN Systems bring smaller, lighter and more efficient power electronics to numerous applications including consumer appliances, data center server racks, heavy-duty battery-operated power tools, notebook travel adaptors and many others.  With current ratings from 8 A to 200 A, GaN Systems is the first company to offer a comprehensive product range of gallium nitride devices to the global market through an exclusive worldwide distribution agreement with Mouser Electronics.

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