Low-Voltage Power MOSFETs Reduce Losses To Meet Efficiency Demands
ON Semiconductor optimized the design, materials, and packaging of six new N-channel power MOSFETs to deliver an RDS(ON) of 0.7 mΩ and 3780-pF input capacitance. As a result, the devices minimize conduction, switching, and driver losses, leading to higher efficiency. The NTMFS4Hxxx and NTTFS4Hxxx series MOSFETs also offer improved thermal performance and low package resistance and inductance when compared to existing products, according to the company. Applications include server and networking equipment, and high-power-density dc-dc converters. They also support synchronous rectification in point-of-load (PoL) modules. The NTMFS4H01N, NTMFS4H01NF, NTMFS4H02N and NTMFS4H02NF MOSFETs are housed in S08-FL packages. The NTTFS4H05N and NTTFS4H07N feature µ8-FL packaging. All MOSFETs come with or without a Schottky diode.