1120 Mw Ga N Systems Eval Kits Promo 5fb81c82ea18b

Evaluate GaN Power Modules with Easy-to-Use Kits

Nov. 20, 2020

GaN modules meet industry-standard footprints with superior system performance.

If you’re looking to investigate the benefits of GaN (gallium nitride) power semiconductors, you’re in luck: GaN Systems has debuted four new integrated power-module evaluation kits. The module kits are designed to be easy to use for evaluating performance in high-power applications such as traction inverters, industrial motors, energy storage systems, PV inverters, and a variety of lower-power board and brick power supplies.

The available evaluation kits include a 100-V driver GaN DC/DC power-stage module; a 650-V, 150-A half-bridge intelligent power module (IPM); a 650-V, 150-A full-bridge module and driver; and a 650-V, 300-A 3-phase module and driver.

The 100-V driver GaN - integrated DC/DC power-stage module provides high power density and efficiency for DC/DC topologies. This integrated module features a 7-mΩ half-bridge power stage, ultra-low R-theta, high output power, and dual PWM input with ultra-low dead time. Applications include 48-V step-down converters, high-performance Class D audio systems, CPU/GPU/DDR power, 48-V to 12-V bricks and board forward converter, zero-voltage switching (ZVS), and buck/boost topologies. The module is also available mounted on an evaluation board for easy testing.
Designed with an industry-standard, low-profile case with press-fit pins, the 650-V, 150-A half-bridge IPM provides an integrated gate drive, 10 mΩ RDS(on), superior thermal performance, and ultra-small system form factor (82 x 38 mm). Designed for high-efficiency, high-frequency switching applications, this kit is ideal for PV inverters, energy storage systems (ESS), uninterruptible power supplies (UPS), and variable frequency drives (VFD).
With features similar to those of the half-bridge IPM, the 650-V, 150-A full-bridge module and driveroffers the benefits of lower losses and cooler operating temperatures, high efficiency, increased power density, and reduced volume and weight. An external optimized and isolated gate driver board is available for easy evaluation of the module. Applications include PV inverters, ESS, UPS, VFD, automotive traction inverters, and on-board chargers (OBC).
Also built on an industry-standard form factor, the 650-V, 300-A 3-Phase GaN power module and driverfeatures high performance and high power density to meet the requirements of the automotive and industrial markets. This module provides a high thermal-conductivity base plate, press-fit pins for ease of assembly, and zirconia-toughened alumina (ZTA) substrates for superior reliability. An external optimized and isolated gate driver board is available for easy evaluation of the module. Applications include high efficiency 75-kW traction inverter drives and motor drives.

GaN Systems’ evaluation kits make it easier to incorporate GaN power semiconductors, enabling designers to take advantage of the benefits of high efficiency and smaller size and weight.

About the Author

David Maliniak | MWRF Executive Editor

In his long career in the B2B electronics-industry media, David Maliniak has held editorial roles as both generalist and specialist. As Components Editor and, later, as Editor in Chief of EE Product News, David gained breadth of experience in covering the industry at large. In serving as EDA/Test and Measurement Technology Editor at Electronic Design, he developed deep insight into those complex areas of technology. Most recently, David worked in technical marketing communications at Teledyne LeCroy. David earned a B.A. in journalism at New York University.