CISSOID introduces a new version of HADES®, its turnkey isolated gate driver reference design, tailored to support SEMISOUTH silicon carbide (SiC), normally-off power JFETs (SJEP120R100).
HADES® Reference Design is based on the CISSOID chipset THEMIS, ATLAS and RHEA, sustaining junction temperatures from -55 °C up to +225 °C in metal and ceramic packages. Capitalizing on its long experience in High Reliability components, CISSOID will be also introducing in the coming months a lower temperature version limited to 125°C, with an expected operational lifetime of at least 20 years.
With a strong focus on transportation and renewable energy applications, this gate driver solution delivers:
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Optimized switching of SemiSouth's SiC JFET technology, giving your system the highest possible switching efficiency
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Reliable, robust operation for more than 20 years expected at 125°C
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Low cost in mass production
Driving SemiSouth's SJEP120R100 SiC JFET, the test board was able to hard-switch 600 V and 10 A with turn-off and turn-on times of only 14 ns and 24 ns, respectively. The test board also demonstrated very low switching losses (Etotal less than 124 µJ) that were a factor of 10 to 20 lower than standard silicon IGBTs, but also lower than a number of other SiC power switches. Overall, the system demonstrated superior power efficiency, taking full advantage of the SemiSouth devices.
CISSOID HADES® half-bridge isolated gate driver board, P/N EVK-TIT0636B, is available now from CISSOID for electrical evaluation with the high-temperature version of the chipset; a single channel, low cost version of the isolated gate drive chipset will be introduced in the coming months. Application Note (CISSOID AN-121168) is also available from CISSOID.
CISSOID
Part Number: HADES
