600-V Half-Bridge Gate Driver for MOSFETs and IGBTs
Jan. 19, 2016
Texas Instruments recently introduced a half-bridge gate driver for discrete power MOSFETs and IGBTs that operate up to 600 V.
Texas Instruments recently introduced a half-bridge gate driver for discrete power MOSFETs and IGBTs that operate up to 600 V. The UCC27714 high-side, low-side driver with 4A source and 4A sink current capability reduces component footprint by 50 percent, enabling higher power density in high-frequency, offline AC/DC power supplies used in server, telecom and industrial designs including uninterruptible power supplies.
The UCC27714 delivers 90 ns propagation delay, 40 percent lower than existing silicon solutions, tight control of the propagation delay with a maximum of 125 ns across -40 °C to 125 °C and tight channel-to-channel delay matching of 20 ns across -40 °C to 125 °C. The device eliminates the need for bulky gate drive transformers, saving significant board space in high-frequency switch-mode power electronics.
UCC27714 features:
Smaller footprint creates highest power-density solutions: The UCC27714 reduces gate driver component footprint by 50 percent in secondary-side controlled power supplies.
Advanced noise toleration: Negative voltage handling of -6 V at the switched-node pin creates the ability to tolerate noise, causing virtually no malfunctions in the electronic system.
MOSFETs have the ability to drive over a wide power range: The device's high-current capability of 4 A enables MOSFETs to drive over a wide power range, from a few watts to a kilowatt.
Operates across wide temperatures: All electrical characterizations have little variations across operating temperatures, creating a simplified design and speeding time to market.
Complementary devices to maximize system performance.
The high-speed 600 V high-side low-side gate driver comes in a small outline integrated circuit (SOIC)-14 package and is priced at US$1.75 in 1,000 unit-quantities.
