Power MOSFETs Achieve New Low In On-Resistance

July 22, 2002

Three power MOSFETs in tiny six-lead SC-89 packages reach a new low in on-resistance--less than 1 W. The single p-channel Si1039X and Si1037X offer an RDS(ON) of 165 and 195 mW, respectively, at a 4.5-V gate drive. Incorporating...

Ashok Bindra

Three power MOSFETs in tiny six-lead SC-89 packages reach a new low in on-resistance--less than 1 W. The single p-channel Si1039X and Si1037X offer an R_DS(ON) of 165 and 195 mW, respectively, at a 4.5-V gate drive. Incorporating both n- and p-channel MOSFETs in a single SC-89 package, the Si1040X is a level-shifted load switch. Capable of driving loads up to 0.43 A, the Si1040X operates on supplies from 1.8 to 8.0 V. In 100,000-unit quantities, the power MOSFETs each cost $0.22.

Vishay Siliconix
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