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    1. Technologies
    2. Power

    Mini GaAs HBT FET Needs Only Single Supply

    May 1, 2000
    Designed for use as an LNA in TDMA handsets and other L and S Band receiver designs, the NE52118 miniature GaAs heterojunction bipolar FET delivers low noise and high gain performance of 1.0 dB at 2 GHz and 15 dB at 2GHz. Like silicon transistors, the

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    Designed for use as an LNA in TDMA handsets and other L and S Band receiver designs, the NE52118 miniature GaAs heterojunction bipolar FET delivers low noise and high gain performance of 1.0 dB at 2 GHz and 15 dB at 2GHz. Like silicon transistors, the chips only need a single power supply. Housed in firm's super mini-mold 4-pin "18" package, the devices are priced at $0.68 each/100,000.

    Company: CALIFORNIA EASTERN LABORATORIES

    Product URL: Click here for more information

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