RF Power LDMOS Transistor Is Low-Voltage Device

    May 1, 2000
    Designed for both narrow and wideband data and voice communication, this 7.5V, 6W RF power LDMOSFET surface-mount transistor exhibits 10 dB gain at 500 MHz. It is not internally matched and performs well down to dc. Data sheets, Spice models, and

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    Designed for both narrow and wideband data and voice communication, this 7.5V, 6W RF power LDMOSFET surface-mount transistor exhibits 10 dB gain at 500 MHz. It is not internally matched and performs well down to dc. Data sheets, Spice models, and S-Parameters are available at the firm's web site.

    Company: POLYFET RF DEVICES

    Product URL: Click here for more information

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