1800-V RC-IGBT Meets Inverter Switching Needs

Sept. 25, 2012
An IGBT with an integrated reverse recovery diode from Toshiba Electronics Europe offers an impressive voltage rating of 1800 V.

An IGBT with an integrated reverse recovery diode from Toshiba Electronics Europe offers an impressive voltage rating of 1800 V. The GT40WR21 N-channel RC-IGBT (Reverse Conducting IGBT) consists of a freewheeling diode monolithically integrated into an IGBT chip. A typical IGBT fall time of only 0.15 µs supports ultra-high-speed switching (see the figure).

The diode is rated for a collector current (IC) of 40 A. It also can handle peak currents of 80 A for 1 ms. Typical saturation voltage at 40 A is only 2.9 V. Maximum collector power dissipation at 25°C is 375 W. The integrated diode is rated for a forward current of 20 A and a peak current (for 100 µs) of 80 A. As with previous models in Toshiba’s N-channel IGBT family, the GT40WR21 can support high-temperature operation with a maximum junction temperature (Tj) of 175°C. Low turn-off switching losses ensure high-efficiency operation.

The GT40WR21 is particularly suitable for induction heating and induction cooking designs, says Toshiba, alongside other applications demanding high-performance voltage resonator inverter switching. It comes in the TO247-equivalent package TO-3P (N), which measures just 15.5 by 20.0 by 4.5 mm.

Toshiba Electronics Europe

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