650 V Power MOSFET Steps Up Superjunction Technology
May 9, 2013
650 V Superjunction MOSFET technology optimizes power MOSFET for hard switching topologies.
Infineon’s CoolMOS C7 utilizes their 650 V Superjunction MOSFET technology in optimizing the n-channel power MOSFET for hard switching topologies such as CCM PFC, TTF and solar boost. Typical applications include solar, server, telecom and UPS. The 650 V breakdown voltage also suits the C7 for applications requiring an extra safety margin. Offering a R DS(on) of 19 mΩ in the TO-247 4-pin package, and 45 mΩ in the TO-220 and D 2PAK packages, the C7 now enables customers to operate at switching frequencies greater than 100 kHz whilst achieving Titanium levels of efficiency in Server PFC stages. The fourth pin in the TO-247 package acts as a Kelvin source which can be used to reduce the parasitic inductance of the source lead of the power MOSFET. Reduced energy in the output capacitance (E OSS), along with a low gate charge (Q g), bring efficiency benefits at light load conditions as well. Samples of the CoolMOS C7 products are available now with volume production beginning in June 2013.
