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Eliminate Large External Current-Sensing Resistors With Compact 600-V IC

March 25, 2014
Measuring high current (10 to 100 A) through a power MOSFET or IGBT typically requires a large resistor, which generates excess power losses (10 to approximately 30 W).

Measuring high current (10 to 100 A) through a power MOSFET or IGBT typically requires a large resistor, which generates excess power losses (10 to approximately 30 W). International Rectifier’s IR25750 general-purpose current-sensing IC extracts the voltage across a power MOSFET’s internal RDS(ON) or an IGBT’s VCE(ON) during the switch’s on-time, eliminating large external current-sensing resistors, heatsinks, and excess power losses. And it does so in a compact SOT23-5L package, significantly reducing space. The IC’s gate-drive input provide the VCC supply voltage and synchronizes the RDS(ON) and VCE(ON) sensing circuit to the on and off times of the MOSFET or IGBT. By employing the company’s high-voltage technology, the device features 600-V blocking capability needed to block high VDS or VCE voltage during the switch’s off-time. Other features include low gate input capacitance, internal filter delay at turn-on (200 ns typical), and internal 20.8-V Zener clamps on the GATE and CS pins. All inputs and outputs have electrostatic-discharge and latch immunity for rugged monolithic protection.

INTERNATIONAL RECTIFIER

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