Single-Stage Bidirectional Switch Converters Target EV Chargers, Solar Inverters, and More
At APEC 2025, Navitas Semiconductor introduced a single-stage bidirectional switch-converter architecture based on the first commercially available 650-V bidirectional GaNFast ICs and high-speed isolated gate drivers.
Until now, virtually all high-voltage power-converter architectures required two or more stages. Navitas offers a simpler solution that achieves up to 10% cost savings, 20% energy savings, and up to a 50% reduction in solution size. Targeted applications include EV charging (onboard and roadside), solar inverters, energy storage, and motor drives.
The solution consists of a family of 650-V bidirectional GaNFast ICs and high-speed isolated gate drivers. The GaNFast power devices are based on a merged drain structure, which integrates two gate controls and a patented, integrated, active substrate clamp. The companion IsoFast high-speed drivers are galvanically isolated, optimized to drive bidirectional GaN power devices with 4X higher transient immunity than existing drivers (up to 200 V/ns). No external negative bias supply is required.
The first members of the product family are the NV6427 and NV6428 bidirectional GaNFast ICs, and their companion drivers, the IsoFast NV1702 (dual, independent-channel, digital, isolated bidirectional GaN gate driver) and NV1701 (half-bridge GaN digital isolator). All devices are fully qualified and immediately available in mass-production quantities with samples available now to qualified customers. Evaluation boards and a user guide are also available.
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