80/100-V Power MOSFETs Feature Low On-Resistance and AEC-Q Qualification
The PerFET family of power MOSFETs crafted by Taiwan Semiconductor now includes a pair of 80- and 100-V N-channel power devices that offer a best-in-class figure of merit (FOM: RDS(on)*Q = 184) and 175°C avalanche rating. The AEC-Q-qualified PerFETs’ low on-resistance (RDS(on)) reduces conduction losses, and their very low gate charge (Qg) suits them for automotive power applications as well as commercial and industrial designs where efficiency and reliability are important.
The 100-V PerFET series comprises six devices, with single-output current ratings of 50 to 100 A and dual-outputs rated at 31 A. Target applications are 48-V automotive, switch-mode power supplies (SMPS), server and telecom, DC-DC converters, motor drives, and polarity switches.
The new 80-V PerFET series also offers six devices with single-output models maintaining current ratings of 33 to 110 A, and dual-output models with ratings of 31 to 33 A. They’re well-suited for use in ideal diodes, USB-PD and type-C charger/adapters, UPS, solar inverters, LED lighting, and telecom power.
PerFET devices are housed in TSC-designed, industry-standard-size (5 × 6 mm) PDFN56U (single/dual) packages. A wettable flank improves solder joint reliability and AOI accuracy during PCB assembly. All of the MOSFETs are available now, with samples in stock and 16-week delivery of production quantities.